FDP12N50
Manufacturer:
On Semiconductor
Mfr.Part #:
FDP12N50
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 165 W 500 V Continuous Drain Current (ID):11.5 A 30 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Resistance | 650 MΩ |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 165 W |
| Power Dissipation | 165 W |
| Number of Channels | 1 |
| Input capacitance | 1.315 nF |
| Continuous Drain Current (ID) | 11.5 A |
| Rds On Max | 650 mΩ |
| Drain to Source Voltage (Vdss) | 500 V |
| Turn-On Delay Time | 24 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Fall Time | 30 ns |
| Rise Time | 50 ns |
| Gate Charge | 30 nC |
| Drain to Source Resistance | 550 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 500 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | N-Channel |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||